The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jun. 06, 2019
Micron Technology, Inc., Boise, ID (US);
Ying Rui, Meridian, ID (US);
Tong Liu, Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Davide Colombo, Boise, ID (US);
Silvia Borsari, Boise, ID (US);
Austin Johnson, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.