The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jan. 13, 2017
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
HITACHI POWER SEMICONDUCTOR DEVICE, LTD., Hitachi, JP;
Abstract
In a semiconductor device using a wide bandgap semiconductor material having a bandgap larger than that of silicon, reliability of the semiconductor device is improved by achieving a structure in which electric field strength in the vicinity of an outer end portion of a semiconductor chip is relaxed. A side surface of the semiconductor chip CHPis formed of a region Rincluding a first corner, a region Rincluding a second corner, and a region Rinterposed between the region Rand the region R. At this point, in a case of defining a minimum film thickness of a high electric field-resistant sealing member MR in the region Ras tand defining a maximum film thickness of the high electric field-resistant sealing member MR in the region Ras t, a relation of t≤1.5×tis satisfied.