The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Feb. 05, 2016
Hitachi High-tech Corporation, Tokyo, JP;
Shinichi Matsubara, Tokyo, JP;
Hiroyasu Shichi, Tokyo, JP;
Tomihiro Hashizume, Tokyo, JP;
Yoshimi Kawanami, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
An Hion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The Hion can be obtained by use of a probe current within a voltage rangearound a second peakoccurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.