The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Aug. 27, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-yoon Lee, Seoul, KR;

Doo-gyu Lee, Ansan-si, KR;

Chan-sam Chang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/24 (2012.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 1/24 (2013.01); G03F 7/2008 (2013.01); G03F 7/7015 (2013.01); G03F 7/70883 (2013.01); G03F 7/70891 (2013.01); H05G 2/008 (2013.01);
Abstract

Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.


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