The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 12, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hong-Nien Lin, Hsinchu, TW;
Ming-Heng Tsai, Taipei, TW;
Yong-Yan Lu, Hsinchu, TW;
Chun-Sheng Liang, Changhua County, TW;
Jeng-Ya Yeh, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a gate disposed over the substrate, a source/drain disposed in the substrate at two sides of the gate, and an insulating layer disposed over sidewalls of the gate and at least a portion of a surface of the source/drain. In some embodiments, the insulating layer includes a first side facing the gate or the source, and includes a second side opposite to the first side. The insulating layer includes dopants, and a concentration of the dopants is reduced from the second side to the first side of the insulating layer.