The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Apr. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Hsien-Yuan Liao, Hsinchu, TW;

Chien-Chih Ho, Hsinchu, TW;

Chi-Hsien Lin, Taichung, TW;

Hua-Chou Tseng, Hsinchu, TW;

Ho-Hsiang Chen, Hsinchu, TW;

Ru-Gun Liu, Hsinchu County, TW;

Tzu-Jin Yeh, Hsinchu, TW;

Ying-Ta Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 21/28035 (2013.01); H01L 21/28132 (2013.01); H01L 21/32133 (2013.01); H01L 29/0847 (2013.01); H01L 29/42376 (2013.01); H01L 29/4916 (2013.01); H01L 29/6656 (2013.01); H01L 29/66659 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.


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