The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Dec. 20, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wen-Shun Lo, Hsinchu County, TW;

Yu-Chi Chang, Kaohsiung, TW;

Felix Ying-Kit Tsui, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01); H01L 21/266 (2006.01); H01L 29/423 (2006.01); H01L 27/11 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42368 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 29/165 (2013.01);
Abstract

A semiconductor structure includes a substrate having a first region and a second region defined thereon, a first isolation in the first region, a second isolation in the second region, and a region surrounding the first isolation in the substrate. The substrate includes a first material, and the region includes the first material and a second material. The first isolation has a first width, the second isolation has a second width, and the first width is greater than the second width. A bottom and sidewalls of the first isolation are in contact with the region, and a bottom and sidewalls of the second isolation are in contact with the substrate.


Find Patent Forward Citations

Loading…