The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 14, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Angelo Visconti, Appiano Gentile, IT;
Giorgio Servalli, Fara Gera d'Adda, IT;
Andrea Locatelli, Dalmine, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2259 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01);
Abstract
Methods, systems, and devices for memory cell biasing techniques are described. A memory cell may be accessed during an access phase of an access operation. A pre-charge phase of the access phase may be initiated. The memory cell may be biased to a voltage (e.g., a non-zero voltage) after the pre-charge phase. In some examples, the memory cell may be biased to the voltage when a word line is unbiased and the memory cell is isolated from the digit line.