The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Jan. 31, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Akhilesh Jaiswal, Ballston Spa, NY (US);

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Steven Soss, Cornwall, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01);
Abstract

One illustrative MRAM device disclosed herein includes a first bit cell and a second bit cell. The first bit cell comprises a first access transistor and a first MTJ stack. The first MTJ stack comprises a first pinned layer and a first free layer, wherein the first pinned layer is connected to the first access transistor. The second bit cell comprises a second access transistor and a second MTJ stack. The second MTJ stack comprises a second pinned layer and a second free layer, wherein the second free layer is connected to the second access transistor.


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