The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Apr. 10, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a method of manufacturing a photomask, a layout of a circuit mask pattern in a mask region corresponding to a chip region of a substrate is designed. A layout of a monitoring mask pattern representing a critical dimension (CD) of the circuit mask pattern in the mask region is designed. The monitoring mask pattern includes a mask-critical dimension uniformity (CDU) detection pattern configured to detect CDU in mask and a wafer-CDU detection pattern configured to detect CDU in wafer. A first optical proximity correction (OPC) is performed on the mask-CDU detection pattern. A second optical proximity correction is performed on the wafer-CDU detection pattern. A photomask having the circuit mask pattern and the monitoring mask pattern is formed.