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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10963609 B1

PDFFull Text
Date of Patent:
Mar. 30, 2021

Filed:

Jan. 06, 2020

Method for analyzing electromigration (em) in integrated circuit

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chin-Shen Lin, Taipei, TW;

Ming-Hsien Lin, Hsinchu County, TW;

Wan-Yu Lo, Taoyuan, TW;

Meng-Xiang Lee, Dounan Township, Yunlin County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Naum Levin

Int. Cl.
CPC ...
G06F 30/00 (2020.01); G06F 30/3308 (2020.01); G06F 30/392 (2020.01); G06F 119/10 (2020.01); G06F 119/02 (2020.01);
U.S. Cl.
CPC ...
G06F 30/3308 (2020.01); G06F 30/392 (2020.01); G06F 2119/02 (2020.01); G06F 2119/10 (2020.01);
Abstract

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to the current simulation result of the IC. It is determined whether to relax the EM rule on the metal segment according to the number of vias over the metal segment in the layout. The vias are in contact with the metal segment.

Find Patent Forward Citations

Lin, Chin-Shen. (2021). Method for analyzing electromigration (em) in integrated circuit (U.S. Patent No. 10963609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10963609

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