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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10962884 B1

PDFFull Text
Date of Patent:
Mar. 30, 2021

Filed:

Mar. 28, 2018

Treatment liquid and pattern forming method

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Hideaki Tsubaki, Shizuoka, JP;

Toru Tsuchihashi, Shizuoka, JP;

Wataru Nihashi, Shizuoka, JP;

Kei Yamamoto, Shizuoka, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

JCIPRNET

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 7/40 (2006.01); G03F 7/075 (2006.01); G03F 7/095 (2006.01); G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/038 (2006.01); H01L 21/304 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); G03F 7/0043 (2013.01); G03F 7/0046 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/0758 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/304 (2013.01);
Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPaor less and a second organic solvent having an SP value of 17.1 MPaor more.

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