The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Apr. 12, 2018
Applicant:
Sense Photonics, Inc., Durham, NC (US);
Inventors:
Scott Burroughs, Raleigh, NC (US);
Brent Fisher, Bethesda, MD (US);
James Carter, Chapel Hill, NC (US);
Assignee:
Sense Photonics, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/42 (2006.01); G01S 7/481 (2006.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/00 (2006.01); H01S 5/026 (2006.01); G01S 17/02 (2020.01); G01S 17/89 (2020.01); H01S 5/042 (2006.01); H01S 5/02253 (2021.01); F21V 5/04 (2006.01); H01S 5/40 (2006.01); G02B 26/10 (2006.01); H01S 5/062 (2006.01); G01J 1/44 (2006.01); H01L 31/167 (2006.01); H01L 31/18 (2006.01); G02B 5/08 (2006.01); H01L 25/00 (2006.01); H01S 3/02 (2006.01); G02B 3/00 (2006.01); H01S 5/12 (2021.01); H01S 5/02 (2006.01); H01S 5/02255 (2021.01);
U.S. Cl.
CPC ...
G01S 7/4815 (2013.01); F21V 5/041 (2013.01); F21V 5/045 (2013.01); G01J 1/44 (2013.01); G01S 17/02 (2013.01); G01S 17/89 (2013.01); G02B 5/0883 (2013.01); G02B 26/10 (2013.01); H01L 25/50 (2013.01); H01L 31/167 (2013.01); H01L 31/18 (2013.01); H01S 3/025 (2013.01); H01S 5/0028 (2013.01); H01S 5/0071 (2013.01); H01S 5/026 (2013.01); H01S 5/0262 (2013.01); H01S 5/02253 (2021.01); H01S 5/04254 (2019.08); H01S 5/062 (2013.01); H01S 5/183 (2013.01); H01S 5/18394 (2013.01); H01S 5/18397 (2013.01); H01S 5/30 (2013.01); H01S 5/40 (2013.01); H01S 5/4025 (2013.01); H01S 5/4037 (2013.01); H01S 5/4075 (2013.01); H01S 5/423 (2013.01); G01J 2001/448 (2013.01); G02B 3/0006 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/02255 (2021.01); H01S 5/04257 (2019.08); H01S 5/12 (2013.01);
Abstract
A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.