The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 23, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Ji-Soo Park, Andover, MA (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 25/04 (2006.01); C30B 29/08 (2006.01); C30B 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/34 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 25/04 (2013.01); C30B 29/08 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02518 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02636 (2013.01); H01L 29/0684 (2013.01); H01L 29/165 (2013.01); H01L 29/34 (2013.01);
Abstract
A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.