The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

May. 30, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ching-Kai Shen, Hsinchu County, TW;

Yi-Chuan Teng, Hsinchu County, TW;

Wei-Chu Lin, Hsinchu, TW;

Hung-Wei Liang, New Taipei, TW;

Jung-Kuo Tu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0041 (2013.01); B81C 1/00293 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2207/07 (2013.01); B81C 2203/0145 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.


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