The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957850 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 23, 2021

Filed:

Oct. 04, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ashim Dutta, Menands, NY (US);

Isabel Cristina Chu, Melrose, NY (US);

Son Nguyen, Schenectady, NY (US);

Michael Rizzolo, Albany, NY (US);

John C. Arnold, North Chatham, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a first encapsulation layer along the device, including forming the first encapsulation layer along a memory device region associated with a memory device, forming an intermediate layer on the first encapsulation layer to enable etch endpoint detection and endpoint-based process control for encapsulation layer etch back, and forming a second encapsulation layer on the intermediate layer.


Find Patent Forward Citations

Dutta, Ashim. (2021). Multi-layer encapsulation to enable endpoint-based process control for embedded memory fabrication (U.S. Patent No. 10957850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10957850

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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