The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Apr. 21, 2020
Infineon Technologies Austria Ag, Villach, AT;
Daniel Hölzl, Unterhaching, DE;
Henning Kraack, Villach, AT;
Gabor Mezoesi, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Waqas Mumtaz Syed, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×10cm; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 μm. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.