The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Aug. 14, 2019
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Thomas P. Dolbear, Austin, TX (US);

Daniel Cavasin, Georgetown, TX (US);

Sanjay Dandia, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); H01L 25/065 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); H01L 25/18 (2006.01); H01L 23/36 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 21/4871 (2013.01); H01L 21/78 (2013.01); H01L 23/3675 (2013.01); H01L 24/27 (2013.01); H01L 24/94 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); C23C 16/06 (2013.01); C23C 16/345 (2013.01); H01L 23/36 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/18 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/27849 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29172 (2013.01); H01L 2224/29188 (2013.01); H01L 2224/29678 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/14 (2013.01); H01L 2924/16195 (2013.01); H01L 2924/171 (2013.01);
Abstract

An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.


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