The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957657 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 23, 2021

Filed:

Oct. 17, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Baozhen Li, South Burlington, VT (US);

Xiao Hu Liu, Briarcliff Manor, NY (US);

Griselda Bonilla, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

A method for constructing an advanced crack stop structure is described. An interconnection structure is formed comprised of a plurality of levels. Each level has an interconnect structure section and a crack stop section. In a first level of the interconnection structure, a high modulus layer is formed in the crack stop recess but not the interconnect recess and a barrier layer and a conductive metal layer is formed in both the interconnection recess and the crack stop recess of the first level. In a second level of the interconnection structure and the crack stop structure, a second high modulus layer is formed in the crack stop recess but not the interconnect recess and a barrier layer and a conductive metal layer is formed in both the interconnection recess and the crack stop recess of the second level. The barrier layers and high modulus layers are deposited in different steps.


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