The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Dec. 20, 2017
Applicant:

Central Glass Company, Limited, Ube, JP;

Inventors:

Kunihiro Yamauchi, Ube, JP;

Takashi Masuda, Ube, JP;

Akifumi Yao, Ube, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C23F 1/12 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23F 1/12 (2013.01); H01L 21/02312 (2013.01); H01L 21/32135 (2013.01); H01L 21/67069 (2013.01);
Abstract

Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a β-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the β-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO, Oand O; wherein the second additive gas is at least one kind of gas selected from the group consisting of HO and HO; wherein the amount of the β-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.


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