The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Nov. 30, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); H01L 21/28088 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A method includes etching a dummy gate to form an opening. A gate dielectric layer is deposited in the opening. A blocking layer is deposited over the gate dielectric layer, wherein the blocking layer has a bottom portion over a bottom of the opening and a sidewall portion over a sidewall of the opening. An adhesive layer is deposited over the bottom portion of the blocking layer. A metal layer is deposited over the adhesive layer, wherein the metal layer is in contact with the sidewall portion of the blocking layer.