The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Sep. 11, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Ning Li, San Jose, CA (US);
Zhelin Sun, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Bhaskar Jyoti Bhuyan, San Jose, CA (US);
Mark Saly, Santa Clara, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/56 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02326 (2013.01); C23C 16/045 (2013.01); C23C 16/36 (2013.01); C23C 16/45551 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02337 (2013.01);
Abstract
Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.