The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jan. 19, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Chung-Chieh Lee, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); F26B 3/04 (2006.01); F26B 21/14 (2006.01); F26B 9/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); F26B 3/04 (2013.01); F26B 9/06 (2013.01); F26B 21/14 (2013.01); H01L 21/67028 (2013.01); H01L 21/67034 (2013.01);
Abstract
A method for drying a wafer is provided. The method includes providing or receiving the wafer and applying a rinsing liquid in a liquid state to the wafer. The rinsing liquid has a boiling point. The method also includes drying the wafer by applying a drying fluid in a gaseous state to the wafer. The drying fluid has a higher temperature than the boiling point of the rinsing liquid, and the rinsing liquid is evaporated and removed by the drying fluid. After the removal of the rinsing liquid, the drying fluid remains in a gaseous state.