The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Mar. 04, 2019
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Hagop Nazarian, San Jose, CA (US);

Sang Nguyen, Union City, CA (US);

Assignee:

Crossbar, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 29/12 (2006.01); G11C 11/56 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 11/5635 (2013.01); G11C 29/12 (2013.01); G11C 2029/4402 (2013.01);
Abstract

A method for facilitating erase or program operations on two-terminal memory devices includes substantially simultaneously initiating erase cycle or program cycle for two-terminal memory devices from a first plurality of two-terminal memory devices, monitoring erase detect or program detect conditions for each of the two-terminal memory devices, and before detecting erase detect or program detect conditions for all of the two-terminal memory devices, the method includes detecting an erase detect or a program detect condition for the first two-terminal memory device from the first plurality of two-terminal memory devices, and initiating an erase cycle or a program for a second two-terminal memory device for a second plurality of two-terminal memory devices, in response to detecting the erase detect or program detect condition for the first two-terminal memory device.


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