The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Jan. 28, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Hsiang-Lan Lung, Ardsley, NY (US);

Erh-Kun Lai, Tarrytown, NY (US);

Chiao-Wen Yeh, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 45/06 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01); G11C 13/0004 (2013.01); H01L 45/144 (2013.01);
Abstract

A 3D memory includes a plurality of first access line levels, a plurality of second access line levels and a plurality of memory cell levels, the memory cell levels being disposed between corresponding first access line levels and second access line levels. The first access line levels include a plurality of first access lines extending in a first direction, and a plurality of remnants of a first sacrificial material disposed between the first access lines. The second access line levels include a plurality of second access lines extending in a second direction and a plurality of remnants of a second sacrificial material disposed between the second access lines. The memory cell levels include an array of memory pillars disposed in the cross-points between the first access lines and the second access lines in adjacent first and second access line levels.


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