The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
May. 30, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 21/266 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66689 (2013.01); H01L 21/02244 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/2815 (2013.01); H01L 29/1095 (2013.01); H01L 29/4983 (2013.01); H01L 29/7816 (2013.01);
Abstract
A semiconductor device comprises a substrate, a gate structure disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate structure. The gate structure has a first sidewall and a second sidewall opposite to the first sidewall. A first insulating layer disposed on the gate dielectric layer and on the first sidewall of the gate structure. The first insulating layer has a first bird's beak portion covering a rounded bottom corner of the gate structure. A pair of spacers are disposed on the first insulating layer and on the second sidewall, respectively.