Three-dimensional memory device including split memory cells and methods of forming the same

Abstract

A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers located over a substrate. Each of the alternating stacks laterally extend along a first horizontal direction, and neighboring pairs of the alternating stacks are laterally spaced apart along a horizontal direction by laterally alternating sequences of memory openings and dielectric pillar structures. Each of the memory openings contains a respective memory opening fill structure that includes a dielectric core, a first vertical semiconductor channel, a second vertical semiconductor channel, a first memory film, and a second memory film. The dielectric core contacts a pair of dielectric pillar structures among the dielectric pillar structures of the laterally alternating sequences.