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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10950601 B1

PDFFull Text
Date of Patent:
Mar. 16, 2021

Filed:

Apr. 15, 2019

Current source using emitter region as base region isolation structure

Applicant:

Nexchip Semiconductor Corporation, Anhui, CN;

Inventor:

Geeng-Chuan Chern, Anhui, CN;

Assignee:

NEXCHIP SEMICONDUCTOR CORPORATION, Anhui, CN;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); G05F 3/26 (2006.01); H01L 21/8222 (2006.01); H01L 21/762 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0823 (2013.01); G05F 3/265 (2013.01); H01L 21/28518 (2013.01); H01L 21/762 (2013.01); H01L 21/8222 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/45 (2013.01); H01L 29/6628 (2013.01); H01L 29/7327 (2013.01);
Abstract

A current source includes a substrate, a base region of a first doping type formed in the substrate, an emitter region of a second doping type formed in the substrate and surrounding the base region, a first collector region of the second doping type formed in the base region, and at least one second collector region of the second doping type formed in the base region, wherein the emitter region includes a deep-well portion and an extending portion, the deep-well portion situated beneath the base region, the extending portion laterally surrounding the base region, the extending portion joined at its bottom to the deep-well portion, the extending portion being flush at its top with a top surface of the substrate. A method of forming the current source is also disclosed.

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