logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10950543 B1

PDFFull Text
Date of Patent:
Mar. 16, 2021

Filed:

May. 09, 2019

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Shinichi Kuwabara, Ibaraki, JP;

Yasutaka Nakashiba, Ibaraki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Selim U Ahmed

Assistant Examiner:

Evan G Clinton

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 21/74 (2006.01); H01L 23/528 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01); H01L 25/065 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 21/743 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/645 (2013.01); H01L 25/0657 (2013.01); H01L 27/0688 (2013.01); H01L 28/10 (2013.01); H01L 27/0288 (2013.01);
Abstract

The semiconductor device includes a first semiconductor substrate, a first wiring layer, a second wiring layer, a second semiconductor substrate, a first conductive portion, and a second conductive portion. The first wiring layer includes a first electrode pad and a first inductor electrically connected with each other. The second wiring layer includes a second inductor and a second electrode pad electrically connected with each other. The first conductive portion is formed in the second semiconductor substrate, the second wiring layer, and the first wiring layer so as to reach the first electrode pad from the back surface of the second semiconductor substrate. The second conductive portion is formed in the second semiconductor substrate and the second wiring layer so as to reach the second electrode pad from the back surface of the second semiconductor substrate. The first inductor and the second inductor are disposed so as to face each other.

Find Patent Forward Citations

Kuwabara, Shinichi. (2021). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10950543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10950543

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…