The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Mar. 13, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongyoun Kim, Seoul, KR;

Seokhyun Lee, Hwaseong-si, KR;

Minjun Bae, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/565 (2013.01); H01L 21/76819 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 23/3128 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01);
Abstract

A redistribution subtrate, a method of fabricating the same, and a semiconductor package are provided. The method including forming a first conductive pattern; forming a first photosensitive layer on the first conductive pattern, the first photosensitive layer having a first through hole exposing a first portion of the first conductive pattern; forming a first via in the first through hole; removing the first photosensitive layer; forming a first dielectric layer that encapsulates the first conductive pattern and the first via, the first dielectric layer exposing a top surface of the first via; and forming a second conductive pattern on the top surface of the first via.


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