The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jun. 07, 2019
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Zuoguang Liu, Schenectady, NY (US);
Sebastian Naczas, Albany, NY (US);
Heng Wu, Altamont, NY (US);
Peng Xu, Guilderland, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a vertical transport fin field effect transistor with self-aligned dielectric separators, including, forming a bottom source/drain region on a substrate, forming at least two vertical fins on the bottom source/drain region, forming a protective spacer on the at least two vertical fins, forming a sacrificial liner on the protective spacer, forming an isolation channel in the bottom source/drain region and substrate between two of the at least two vertical fins, forming an insulating plug in the isolation channel, wherein the insulating plug has a pinch-off void within the isolation channel, and forming the dielectric separator on the insulating plug.