The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Mar. 21, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Daiki Ishii, Tokyo, JP;

Kazuhiro Yoshikawa, Tokyo, JP;

Koichi Tsunoda, Tokyo, JP;

Mitsuhiro Tomikawa, Tokyo, JP;

Junki Nakamoto, Tokyo, JP;

Kenichi Yoshida, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/008 (2013.01); H01G 4/1227 (2013.01);
Abstract

A thin-film capacitor satisfies a relationship of CTE>CTE>CTEregarding a linear expansion coefficient CTEof a base, a linear expansion coefficient CTEof a capacitance unit, and a linear expansion coefficient CTEof a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.


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