Apparatuses and methods for controlling driving signals in semiconductor devices including word and subword driver circuits

Abstract

Apparatuses and methods for controlling driving signals are disclosed herein. Word drivers may be included in a memory device for driving hierarchical structured main word lines and subword lines. The subword lines may be driven by subword drivers that are activated by main word drivers and word drivers. In driving the word lines, driving signals are driven between an active state having an active voltage and an inactive state having an inactive voltage. The active voltage may be a voltage of a power supply and the inactive voltage may be an intermediate voltage between the active voltage and a reference voltage, such as ground. Driving the driving signals in such a manner may reduce current consumption of the memory device in some operations, for example, such as refresh operations.