The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Jul. 05, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Chang Lu, Yunlin County, TW;

Wen-Jer Tsai, Hualien County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G06F 13/16 (2006.01); G11C 11/4094 (2006.01); G11C 11/4097 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 13/1668 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01);
Abstract

A memory device is provided. The memory device includes a plurality of memory cell blocks and a source voltage generator. Each of the memory cell blocks has at least one memory cell. The source voltage generator is coupled to the plurality of memory cell blocks and configured to cause a source voltage of the memory cell block to be a first voltage according to that a memory cell in each of the memory cell blocks is in a selected state and cause a source voltage of the memory cell block to be a second voltage according to that all memory cells in each of the memory cell blocks are in an unselected state, wherein an absolute value of the first voltage is less than an absolute value of the second voltage. In addition, an operating method of the memory device is also provided.


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