The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Aug. 23, 2018
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Isao Takahashi, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Toshimi Hitora, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/868 (2006.01); H01L 29/24 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 21/0262 (2013.01); H01L 21/02483 (2013.01); H01L 21/02502 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02628 (2013.01); H01L 29/045 (2013.01); H01L 29/063 (2013.01); H01L 29/0619 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/872 (2013.01);
Abstract
In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.