The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Sep. 07, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Masahiro Yokomichi, Hiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7825 (2013.01); H01L 29/42364 (2013.01); H01L 29/512 (2013.01); H01L 29/7834 (2013.01);
Abstract

Some embodiments include an integrated assembly with a semiconductor base having a horizontally-extending upper surface, and having a recessed region. A transistor gate is supported by the semiconductor base. The transistor gate has a first segment over the horizontally-extending upper surface, and has a second segment over the recessed region. The first segment has a first vertically-extending surface along an outer edge. The second segment has a ledge along an edge of the recessed region. The ledge has an upper surface which is lower than the horizontally-extending upper surface. The second segment has a second vertically-extending surface extending upwardly from an inner portion of the ledge. A first spacer is along the first vertically-extending surface. A second spacer is along the second vertically-extending surface. The second spacer has a bottom edge beneath the horizontally-extending upper surface of the base.


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