The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Dec. 11, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1037 (2013.01); B82Y 10/00 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.