The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jul. 31, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei Yu Ma, Taitung, TW;

Chia-Hui Chen, Hsinchu, TW;

Kuo-Ji Chen, Taipei County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/861 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 23/60 (2013.01); H01L 27/0296 (2013.01); H01L 27/0688 (2013.01); H01L 23/481 (2013.01); H01L 29/8611 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method (of forming an integrated circuit) includes: forming a first diode on a first substrate of two or more stacked substrates, the first substrate having a first predetermined doping type; forming a second diode on a second substrate of the two or more stacked substrates, the second substrate being formed on the first substrate, and the second substrate having the first predetermined doping type; and forming conductive paths electrically connecting the first diode 3A and the second diode between a circuit and a first common ground rail, the first diode and the second diode being connected in parallel and having opposite polarities.


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