The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Sep. 19, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ravi K. Bonam, Albany, NY (US);

Mukta Ghate Farooq, Hopewell Junction, NY (US);

Dinesh Gupta, Hopewell Junction, NY (US);

James J. Kelly, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/04 (2014.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/73 (2013.01); H01L 24/82 (2013.01); H01L 24/97 (2013.01); H01L 25/042 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/24011 (2013.01); H01L 2224/24105 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/82007 (2013.01);
Abstract

Package structures and methods are provided for constructing multi-chip package structures using semiconductor wafer-level-fan-out techniques in conjunction with back-end-of-line fabrication methods to integrate different size chips (e.g., different thicknesses) into a planar package structure. The packaging techniques take into account intra-chip thickness variations and inter-chip thickness differences, and utilize standard back-end-of-line fabrication methods and materials to account for such thickness variations and differences. In addition, the back-end-of-line techniques allow for the formation of multiple layers of wiring and inter-layer vias which provide high density chip-to-chip interconnect wiring for high-bandwidth I/O communication between the package chips, as well as redistribution layers to route power/ground connections between active-side connections of the semiconductor chips to an area array of solder bump interconnects on a bottom side of the multi-chip package structure.


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