The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Feb. 26, 2019
Toshiba Memory Corporation, Tokyo, JP;
Ippei Kume, Yokkaichi Mie, JP;
Taketo Matsuda, Oita Oita, JP;
Shinya Okuda, Yokkaichi Mie, JP;
Masahiko Murano, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.