The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
May. 30, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Che Chung, Hualien County, TW;
Yi Jen Tsai, New Taipei, TW;
Ching-Sen Kuo, Taipei, TW;
Tsai-Ming Huang, Zhubei, TW;
Jieh-Jang Chen, Zhubei, TW;
Feng-Jia Shiu, Jhudong Township, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); G03F 7/32 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/322 (2013.01); H01L 21/31058 (2013.01); H01L 21/76819 (2013.01); H01L 21/76877 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.