The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Dec. 27, 2017
Itm Isotopen Technologien München Ag, Garching, DE;
Jussi Jernström, Neufahrn, DE;
Konstantin Zhernosekov, Munich, DE;
Yury Totskiy, Munich, DE;
Mark Harfensteller, Unterschleissheim, DE;
Marian Meckel, Munich, DE;
ITM Isotopen Technologien München AG, Garching, DE;
Abstract
AGe/Ga generator for a continuous production of aGa daughter nuclide, wherein theGe parent nuclide thereof is specifically adsorbed to an inorganic support material and wherein saidGe parent nuclide continuously decays toGa by electron capture at a half-life of 270.82 d, wherein the inorganic support material is at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum. The use of at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum as an inorganic support material for the manufacture of aGe/Ga generator for pharmaceutical purposes. With the inorganic support material of the present invention, it is possible to loadGe/Ga generators with up to 8000 MBq ofGe (corresponding to 80 μg Germanium).