The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Oct. 21, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Prasenjit Ray, Hsinchu, TW;

Lee-Chung Lu, Taipei, TW;

Meng-Kai Hsu, Xinfeng Township, TW;

Wen-Hao Chen, Hsinchu, TW;

Yuan-Te Hou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 30/394 (2020.01); H01L 27/02 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); G06F 30/39 (2020.01);
U.S. Cl.
CPC ...
G06F 30/394 (2020.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 23/52 (2013.01); H01L 23/5226 (2013.01); H01L 27/027 (2013.01);
Abstract

A semiconductor apparatus includes a first cell having a first interconnect structure and a second cell having a second interconnect structure. The semiconductor apparatus further includes a first plurality of conductive segments, wherein each conductive segment of the first plurality of conductive segments directly connects a first metal level of the first interconnect structure to a first metal level of the second interconnect structure. The semiconductor apparatus further includes a third cell having a third interconnect structure and a fourth cell having a fourth interconnect structure. The semiconductor apparatus further includes a second plurality of conductive segments, wherein each conductive segment of the second plurality of conductive segments directly connects a second metal level of the third interconnect structure to a second metal level of the fourth interconnect structure, and the second metal level is different from the first metal level.


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