The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Jul. 18, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huiming Bu, Millwood, NY (US);

Sivananda K. Kanakasabapathy, Niskayuna, NY (US);

Fee Li Lie, Albany, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/223 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 21/223 (2013.01); H01L 21/324 (2013.01); H01L 29/0638 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66803 (2013.01);
Abstract

A method of forming a punch through stop region that includes forming isolation regions of a first dielectric material between adjacent fin structures and forming a spacer of a second dielectric material on sidewalls of the fin structure. The first dielectric material of the isolation region may be recessed with an etch process that is selective to the second dielectric material to expose a base sidewall portion of the fin structures. Gas phase doping may introduce a first conductivity type dopant to the base sidewall portion of the fin structure forming a punch through stop region underlying a channel region of the fin structures.


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