logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10937860 B1

PDFFull Text
Expired
Date of Patent:
Mar. 02, 2021

Filed:

Mar. 14, 2019

Nanosheet transistor bottom isolation

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Yi Song, Albany, NY (US);

Lijuan Zou, Slingerlands, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Douglas Pearson

Primary Examiner:

Christine A Enad

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/532 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/02532 (2013.01); H01L 21/76224 (2013.01); H01L 21/76837 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 23/53295 (2013.01); H01L 29/165 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Find Patent Forward Citations

Bi, Zhenxing. (2021). Nanosheet transistor bottom isolation (U.S. Patent No. 10937860). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10937860

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…