The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Jun. 07, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Muthumanickam Sankarapandian, Niskayuna, NY (US);

Donald F. Canaperi, Bridgewater, CT (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/43 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1087 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01); H01L 29/0665 (2013.01); H01L 29/43 (2013.01); B82Y 10/00 (2013.01); H01L 21/02532 (2013.01);
Abstract

A semiconductor structure is provided in which a nanosheet device is formed laterally adjacent, but in proximity to, an embedded dynamic random access memory (eDRAM) cell. The eDRAM cell and the nanosheet device are connected by a doped polycrystalline semiconductor material that is formed during the epitaxial growth of doped single crystalline semiconductor source/drain regions of the nanosheet device. An eDRAM cut mask is used to remove unwanted semiconductor material from regions not including the eDRAM cell and the nanosheet device.


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