The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Jun. 15, 2017
Tokyo Electron Limited, Tokyo, JP;
Kenji Ouchi, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion, an insulating portion, and a main surface, and a surfaceof the metal portionand a surfaceof the insulating portionare exposed on the main surfaceside, the method MT includes: a step Sof accommodating the wafer W in a processing chamberof a plasma processing apparatus; a step Sof starting supplying Ogas into the processing chamber; and a step Sof generating a plasma in the processing chamberby the gas in the processing chambercontaining a SiFgas by supplying the SiFgas and plasma generation high-frequency power into the processing chamber, the plasma generated in the step Scontains deposition species and etching species, and, in the plasma generated in the step S, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.