The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Aug. 28, 2019
Applicant:

Mentor Graphics Corporation, Wilsonville, OR (US);

Inventor:

Kwan Him Lam, Irvine, CA (US);

Assignee:

Mentor Graphics Corporation, Wilsonville, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 29/02 (2006.01); G11C 11/41 (2006.01); G11C 5/14 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 5/148 (2013.01); G11C 11/41 (2013.01); G11C 29/021 (2013.01); G11C 2029/5006 (2013.01);
Abstract

This application discloses a memory device to retain stored data when receiving a voltage supply having at least a retention voltage level. The retention voltage level varies based on a supply voltage and a temperature of an environment around the memory device. A sensitive circuit can adjust the voltage supply received by the memory device based on the supply voltage and the temperature. The sensitive circuit can alter a memory bias supply voltage for the memory device to adjust the voltage supply towards the retention voltage level. The sensitive circuit can include a temperature dependent circuit to generate a bias voltage based on the supply voltage and the temperature, and an adjustment circuit to alter the memory bias supply voltage based on the bias voltage. The adjustment circuit also can include high temperature circuitry to adjust the memory bias supply voltage based on a leakage current from the memory device.


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