The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Jun. 05, 2019
Micron Technology, Inc., Boise, ID (US);
Ankit Sharma, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Albert Fayrushin, Boise, ID (US);
Akira Goda, Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory cell comprises channel material, insulative charge-passage material, programmable material, a control gate, and charge-blocking material between the programmable material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material comprising hafnium, zirconium, and oxygen. Other embodiments are disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile