The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Dec. 15, 2016
Applicant:
Nippon Yttrium Co., Ltd., Omuta, JP;
Inventors:
Ryuichi Sato, Omuta, JP;
Naoki Fukagawa, Omuta, JP;
Yuji Shigeyoshi, Omuta, JP;
Kento Matsukura, Omuta, JP;
Assignee:
NIPPON YTTRIUM CO., LTD., Omuta, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 4/04 (2006.01); C04B 35/553 (2006.01); C04B 35/50 (2006.01); C01F 17/00 (2020.01); C23C 24/04 (2006.01); C01F 17/265 (2020.01); C23C 14/48 (2006.01); C23C 4/12 (2016.01);
U.S. Cl.
CPC ...
C01F 17/00 (2013.01); C01F 17/265 (2020.01); C23C 4/04 (2013.01); C23C 4/12 (2013.01); C23C 14/06 (2013.01); C23C 14/48 (2013.01); C23C 24/04 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01);
Abstract
A film-forming material of the present invention contains an oxyfluoride of yttrium represented by YOF(X and Y are numbers satisfying 0<X and X<Y) and YF, wherein a ratio I/Iof a peak height Iof the (020) plane of YFto a peak height Iof the main peak of YOFas analyzed by XRD is from 0.005 to 100. It is preferable that a ratio I/Iof a peak height Iof the main peak of YOto the peak height Iof the main peak of YOFas analyzed by XRD is 0.01 or less.